Introduction to Low Power Issues in VLSI | p. 1 |
Introduction to VLSI | p. 1 |
Low Power IC Design beyond Sub-20 nm Technology | p. 2 |
Issues Related to Silicon Manufacturability and Variation | p. 3 |
Issues Related to Design Productivity | p. 4 |
Limitation Faced by CMOS | p. 4 |
International Technology Roadmap for Semiconductors | p. 5 |
Different Groups of MOSFETs | p. 8 |
Three MOS Types | p. 9 |
Low Leakage MOSFET | p. 9 |
Importance of Subthreshold Slope | p. 10 |
Why Is Subthreshold Current Exponential in Nature? | p. 13 |
Subthreshold Leakage and Voltage Limits | p. 15 |
Importance of Subthreshold Slope in Low Power Operation | p. 16 |
Ultralow Voltage Operation | p. 16 |
Low Power Analog Circuit Design | p. 17 |
Fundamental Consequence of Lowering Supply Voltage | p. 18 |
Analog MOS Transistor Performance Parameters | p. 19 |
Summary | p. 21 |
References | p. 22 |
Scaling and Short Channel Effects in MOSFET | p. 24 |
MOSFET Scaling | p. 24 |
International Technology Roadmap for Semiconductors | p. 24 |
Gate Oxide Scaling | p. 25 |
Gate Leakage Current | p. 25 |
Mobility | p. 26 |
High-k Gate Dielectrics | p. 26 |
Key Guidelines for Selecting an Alternative Gate Dielectric | p. 26 |
Materials | p. 26 |
Gate Tunneling Current | p. 27 |
Gate Length Scaling | p. 27 |
Introduction to Short Channel Effect in MOSFET | p. 27 |
Reduction of Effective Threshold Voltage | p. 28 |
Drain-induced Barrier Lowering | p. 28 |
Mobility Degradation and Surface Scattering | p. 30 |
Surface Scattering | p. 32 |
Hot Carrier Effect | p. 32 |
Punch-through Effect | p. 32 |
Velocity Saturation Effect | p. 32 |
Increase in Off-state Leakage Current | p. 34 |
Motivation for Present Research | p. 34 |
Lightly Doped Drain Structure | p. 35 |
Channel Engineering Technique | p. 36 |
Gate Engineering Technique | p. 37 |
Single Halo Dual Material Gate MOSFET | p. 37 |
Double Halo Dual Material Gate MOSFET | p. 38 |
Double Gate MOSFET | p. 38 |
Dual Material Double Gate MOSFET | p. 40 |
Triple Material Double Gate MOSFET | p. 41 |
FinFET | p. 41 |
Triple Gate MOSFET | p. 43 |
Gate-all-around MOSFET | p. 43 |
Surrounding Gate MOSFET | p. 43 |
Silicon Nanowires | p. 44 |
Fringing-induced Barrier Lowering | p. 45 |
Silicon-on-insulator MOSFETs | p. 45 |
Nonconventional Double Gate MOSFETs | p. 46 |
Tunnel Field-effect Transistor | p. 63 |
IMOS Device | p. 65 |
Summary | p. 65 |
References | p. 66 |
Advanced Energy-reduced CMOS Inverter Design | p. 71 |
Introduction | p. 71 |
Transfer Characteristics of Inverter | p. 71 |
Static CMOS Inverter in Super-threshold Regime | p. 73 |
Introduction to Sub-threshold Logic | p. 94 |
Summary | p. 107 |
References | p. 108 |
Advanced Combinational Circuit Design | p. 112 |
Introduction | p. 112 |
Static CMOS Logic Gate Design | p. 112 |
Complementary Properties of CMOS Logic | p. 112 |
CMOS NAND Gate | p. 113 |
CMOS NOR Gate | p. 113 |
Some More Examples of CMOS Logic | p. 115 |
XOR or Nonequivalence Gate Using CMOS Logic | p. 116 |
XOR-XNOR or Equivalence Gate Using CMOS Logic | p. 116 |
And-Or-Invert and Or-And-Invert Gates | p. 117 |
Full Adder Circuits Using CMOS Logic | p. 118 |
Pseudo-nMOS Gates | p. 120 |
Why the Name Is Pseudo-nMOS? | p. 123 |
Ratioed Logic | p. 123 |
Operation of Pseudo-nMOS Inverter | p. 124 |
Pass-transistor Logic | p. 125 |
Complementary Pass Transistor Logic | p. 127 |
Signal Restoring Pass Transistor Logic Design | p. 128 |
Sizing of Transistor in CMOS Design Style | p. 129 |
Introduction to Logical Effort | p. 132 |
Definitions of Logical Effort | p. 132 |
Delay Estimation by Logical Effort | p. 135 |
Introduction to Transmission Gate | p. 136 |
Use of CMOS TG as Switch | p. 138 |
2:1 Multiplexer Using TG | p. 141 |
XOR Gate Using TG -141 | |
XNOR Gate Using TG | p. 143 |
Transmission Gate Adders | p. 144 |
More Examples of TG Logic | p. 144 |
Tristate Buffer | p. 145 |
Transmission Gates and Tristates | p. 146 |
Implementation of Combinational Circuit Using DTMOS Logic for Ultra low Power Application | p. 149 |
ECLR Structure | p. 154 |
Power Consumption | p. 175 |
Propagation Delay | p. 175 |
References | p. 175 |
Advanced Energy-reduced Sequential Circuit Design | p. 177 |
Introduction to Sequential Circuit | p. 177 |
Basics of Regenerative Circuits | p. 177 |
Basic SR Flip-Hop/Latch | p. 181 |
NAND Gate-based Negative Logic SR Latch | p. 183 |
Clocked SR Latch | p. 183 |
Clocked JK Latch | p. 185 |
Toggle Switch | p. 186 |
Master-slave Flip-flop | p. 186 |
D Latch | p. 187 |
Positive and Negative Latch | p. 188 |
Multiplexer-based Latch | p. 188 |
Master-slave Edge-triggered Flip-flops | p. 190 |
Timing Parameters for Sequential Circuits | p. 192 |
Timing of Multiplexer-based Master-slave Flip- flop | p. 194 |
The Sizing Requirements for the Transmission Gates | p. 195 |
Clock Skews due to Nonideal Clock Signal | p. 196 |
Design and Analysis of the Flip-flops Using DTMOS Style | p. 197 |
SR Latch and Flip-flop | p. 197 |
JK Latch and JK Flip-flop | p. 201 |
D Flip-flop | p. 202 |
Adiabatic Flip-flop | p. 205 |
References | p. 207 |
Introduction to Memory Design | p. 208 |
Introduction | p. 208 |
Types of Semiconductor Memory | p. 208 |
Memory Organization | p. 210 |
Introduction to DRAM | p. 212 |
One-transistor DRAM Cell | p. 213 |
Write | p. 214 |
Hold | p. 214 |
Read | p. 215 |
Capacitor in DRAM | p. 217 |
Refresh Operation of DRAM | p. 219 |
DRAM Types | p. 220 |
FPM DRAMS | p. 220 |
Extended Data Out DRAMs | p. 221 |
Burst EDO DRAMs | p. 221 |
ARAM | p. 221 |
Cache DRAM | p. 221 |
Enhanced DRAM (EDRAM) | p. 221 |
Synchronous DRAM | p. 222 |
Double Data Read DRAMs | p. 222 |
Synchronous Graphic RAM | p. 222 |
Enhanced Synchronous DRAMs | p. 222 |
Video DRAMs | p. 223 |
Window DRAMs | p. 223 |
Pseudo-static RAMs | p. 223 |
Rambus DRAMs | p. 223 |
Multibank DRAM | p. 224 |
Ferroelectric DRAM | p. 224 |
SOI DRAM | p. 225 |
Operating Principle | p. 225 |
Design Considerations of SOI DRAM | p. 226 |
Introduction to SRAM | p. 226 |
SRAM Cell and Its Operation | p. 227 |
SRAM Cell Failures | p. 228 |
Performance Metrics of SRAM | p. 228 |
Static Noise Margin | p. 228 |
Reliability Issues of 6-T SRAM | p. 229 |
Read-only Memory | p. 230 |
EPROM | p. 233 |
Electrically Erasable Programmable Read-only Memory (E2PROM) | p. 234 |
Flash Memory | p. 236 |
Summary | p. 238 |
References | p. 239 |
Analog Low Power VLSI Circuit Design | p. 242 |
Analog Low Power Design: Problems with Transistor Mismatch | p. 242 |
Mixed-signal Design with Sub-100 nm Technology | p. 243 |
Challenges in MS Design in Sub-100 nm Space | p. 244 |
Lack of Convergence of Technology | p. 244 |
Digital Scaling | p. 245 |
Memory Scaling | p. 246 |
Analog Scaling | p. 247 |
Degraded SNR | p. 247 |
Degradation in Intrinsic Gain | p. 248 |
Device Leakage | p. 248 |
Mismatch due to Reduced Matching | p. 248 |
Availability of Models | p. 248 |
Passives | p. 248 |
RF Scaling | p. 249 |
Issues Related with Power Devices | p. 250 |
Basics of Switched-capacitor Circuits | p. 250 |
Resistor Emulation Using SC Network | p. 251 |
Integrator Using SC Circuits | p. 252 |
SC Integrator Sensitive to Parasitic | p. 255 |
Low Power Switched-capacitor Circuit | p. 256 |
Current Source/Sink | p. 258 |
Technique to Increase Output Resistance | p. 261 |
Low Power Current Mirror | p. 263 |
Use of Current Mirrors in IC | p. 263 |
Simple Current Mirror | p. 265 |
Wilson Current Mirror | p. 267 |
Cascode Current Mirror | p. 268 |
Low Voltage Current Mirror | p. 270 |
Fundamentals of Current/Voltage Reference | p. 273 |
Another Way to Obtain Simple Bootstrap Voltage Reference Circuit with Start-up Circuit | p. 279 |
Bandgap Voltage Reference | p. 282 |
Positive TC Voltage | p. 282 |
Negative TC Voltage | p. 283 |
An Introduction to Analog Design Automation | p. 284 |
Survey of Previous Analog Design Flow | p. 285 |
Analog and Mixed-signal Design Process | p. 288 |
Hierarchical Analog Design Methodology | p. 290 |
Current Status for the Main Tasks in Analog Design Automation | p. 292 |
Field-programmable Analog Arrays | p. 299 |
Summary | p. 301 |
References | p. 301 |
Index | p. 305 |
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